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STGW30V60DF

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

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brand：STMicroelectronics

category：Diodes & Transistors

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STGW30V60DF

Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

brand：STMicroelectronics

category：Diodes & Transistors

Description
Features
Specification
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Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

Maximum junction temperature: TJ= 175 °C

Tail-less switching off

VCE(sat)= 1.85 V (typ.) @ IC= 30 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Very fast soft recovery antiparallel diode

Specification

Product Category	IGBTs
Mounting Style	Through Hole
Collector- Emitter Voltage VCEO Max	600V
Collector-Emitter Saturation Voltage	2.35 V
Maximum Gate Emitter Voltage	- 20 V, 20 V
Continuous Collector Current at 25 ℃	60 A
Pd - Power Dissipation	258W
Operating Temperature	-55 ℃ to +175 ℃
Gate-Emitter Leakage Current	250 nA